Infineon BSC320N20NS3: High-Performance 20V OptiMOS™ Power MOSFET for Efficient Power Conversion

In the realm of modern electronics, achieving high efficiency in power conversion is paramount. The Infineon BSC320N20NS3 stands out as a premier solution, engineered to meet the rigorous demands of applications such as server power supplies, high-frequency DC-DC converters, and synchronous rectification. This 20V N-channel OptiMOS™ power MOSFET is designed to deliver exceptional performance, combining low losses with robust reliability.

A key highlight of the BSC320N20NS3 is its extremely low on-state resistance (RDS(on)), which is rated at just 3.2 mΩ maximum at 10 V. This minimal resistance directly translates to reduced conduction losses, allowing for higher efficiency and less heat generation during operation. Such characteristics are critical in power-dense designs where thermal management is a challenge. Additionally, the device features low gate charge (Qg) and exceptional switching performance, enabling faster switching frequencies. This not only contributes to higher power density by allowing the use of smaller passive components but also improves overall system efficiency.

Built using Infineon’s advanced OptiMOS™ technology, this MOSFET is optimized for high-frequency switching applications. Its superior figure of merit (FOM) ensures that designers can achieve a balance between switching and conduction losses, which is essential for advanced power conversion topologies. The device is also housed in a SuperSO8 package, which offers improved thermal resistance and power dissipation capabilities compared to standard SO-8 packages.

Whether used in primary switching roles or as a synchronous rectifier, the BSC320N20NS3 provides the reliability and performance needed in today’s competitive market. Its combination of low RDS(on), fast switching, and thermal efficiency makes it an ideal choice for power engineers aiming to push the boundaries of efficiency and power density.

ICGOOODFIND

The Infineon BSC320N20NS3 OptiMOS™ MOSFET sets a high standard with its ultra-low RDS(on) and optimized switching characteristics, making it a top-tier component for efficient and compact power conversion systems.

Keywords:

Power Efficiency, Low RDS(on), OptiMOS™ Technology, Synchronous Rectification, High-Frequency Switching