Infineon IPW60R120P7 650V CoolMOS™ Power Transistor: Advanced Superjunction Technology for High-Efficiency Switching Applications
The Infineon IPW60R120P7 is a state-of-the-art 650V power MOSFET engineered to meet the rigorous demands of modern high-efficiency power conversion systems. Leveraging Infineon’s proprietary Superjunction (SJ) technology, this device sets a new benchmark for switching performance, thermal management, and reliability in applications such as switched-mode power supplies (SMPS), photovoltaic inverters, motor drives, and industrial power systems.
A key highlight of the IPW60R120P7 is its exceptionally low on-state resistance (RDS(on)) of just 120 mΩ, significantly reducing conduction losses even under high-current conditions. This allows designers to achieve higher power density and improved energy efficiency in both hard- and soft-switching topologies. Combined with its superior switching characteristics and reduced gate charge (Qg), the transistor minimizes turn-on and turn-off losses, enabling operation at higher frequencies without compromising thermal performance.
The CoolMOS™ P7 series also incorporates advanced features such as integrated fast body diode with enhanced reverse recovery behavior. This contributes to lower electromagnetic interference (EMI) and greater reliability in circuits where freewheeling or inductive switching is required. The 650V voltage rating offers ample margin for operation in universal mains applications, including those with fluctuating input voltages or transient surges.
Thermal performance is another critical advantage. The device is housed in a TO-247 package, offering excellent thermal conductivity and compatibility with standard mounting processes. This makes it suitable for high-power designs where efficient heat dissipation is essential for long-term durability.
Designed with sustainability in mind, the IPW60R120P7 helps reduce energy waste in power electronics, supporting global trends toward energy-efficient industrial systems and renewable energy infrastructure.
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The Infineon IPW60R120P7 CoolMOS™ Power Transistor exemplifies the evolution of high-voltage power MOSFETs, combining ultra-low RDS(on), fast switching capability, and robust thermal performance. It is an ideal solution for next-generation high-efficiency power supplies and energy conversion systems.
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Keywords:
Superjunction Technology, High-Efficiency Switching, Low RDS(on), Fast Body Diode, Thermal Performance
